Manufacturer Part Number
BSC123N10LSGATMA1
Manufacturer
Infineon Technologies
Introduction
The BSC123N10LSGATMA1 is a high-performance N-channel MOSFET from Infineon Technologies, designed for a variety of power electronics applications.
Product Features and Performance
100V Drain-to-Source Voltage (Vdss)
3mΩ On-Resistance (Rds(on)) at 50A, 10V
6A Continuous Drain Current (Id) at 25°C
71A Continuous Drain Current (Id) at 100°C
4900pF Input Capacitance (Ciss) at 50V
114W Power Dissipation (Tc)
-55°C to 150°C Operating Temperature Range
Product Advantages
Excellent efficiency and low power loss
High current capability
Robust and reliable performance
Key Technical Parameters
N-Channel MOSFET
Vgs(th) (Max): 2.4V @ 72A
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Gate Charge (Qg) (Max): 68nC @ 10V
Quality and Safety Features
RoHS3 Compliant
Meets industrial-grade quality standards
Compatibility
Suitable for a wide range of power electronics applications
Application Areas
Motor drives
Power supplies
Inverters
Switching converters
Product Lifecycle
Currently in production
Replacements and upgrades may be available in the future
Several Key Reasons to Choose This Product
High efficiency and low power loss
Excellent current handling capability
Robust and reliable performance
Wide operating temperature range
Compliance with industry quality and safety standards
