Manufacturer Part Number
BSC12DN20NS3GATMA1
Manufacturer
Infineon Technologies
Introduction
High-performance N-channel power MOSFET transistor
Part of the OptiMOS series from Infineon Technologies
Product Features and Performance
Drain-to-Source Voltage (Vdss) of 200V
Maximum Gate-to-Source Voltage (Vgs) of ±20V
Low On-Resistance (Rds(on)) of 125mΩ at 5.7A, 10V
Continuous Drain Current (Id) of 11.3A at 25°C (Tc)
Input Capacitance (Ciss) of 680pF at 100V
Power Dissipation (Pd) of 50W at 25°C (Tc)
Operating Temperature range of -55°C to 150°C (TJ)
Product Advantages
Excellent power efficiency due to low on-resistance
High power density and small footprint
Reliable performance in high-temperature environments
Suitable for a wide range of power conversion applications
Key Technical Parameters
N-Channel MOSFET technology
Gate Threshold Voltage (Vgs(th)) of 4V at 25A
Gate Charge (Qg) of 8.7nC at 10V
Surface mount package (PG-TDSON-8-5)
Quality and Safety Features
RoHS3 compliant
Qualified for harsh environmental conditions
Compatibility
Suitable for use in a variety of power conversion circuits, including:
- Switch-mode power supplies
- Motor drives
- Industrial and automotive electronics
Application Areas
Power management
Switching power supplies
Motor control
Industrial and automotive electronics
Product Lifecycle
Currently in active production
No plans for discontinuation or replacement announced
Key Reasons to Choose This Product
High efficiency and power density
Reliable performance in high-temperature environments
Compatibility with a wide range of power conversion applications
RoHS3 compliance for environmentally-friendly use
Proven technology and quality from Infineon Technologies
