Manufacturer Part Number
BSC152N10NSFG
Manufacturer
Infineon Technologies
Introduction
High-performance N-Channel MOSFET with low on-state resistance and high power density, suitable for a wide range of power conversion applications.
Product Features and Performance
Extremely low on-state resistance (RDS(on) = 15.2 mΩ @ 25 A, 10 V)
High breakdown voltage (VDS = 100 V)
Wide operating temperature range (-55°C to 150°C)
Low gate charge (Qg = 29 nC @ 10 V)
Low input capacitance (Ciss = 1900 pF @ 50 V)
High continuous drain current (ID = 9.4 A @ 25°C, 63 A @ 100°C)
High power dissipation (Pd = 114 W @ 100°C)
Product Advantages
Excellent efficiency and thermal performance
Compact and space-saving package
Suitable for high-power density applications
Reliable and robust design
Key Technical Parameters
Drain-to-Source Voltage (VDS): 100 V
Gate-to-Source Voltage (VGS): ±20 V
On-State Resistance (RDS(on)): 15.2 mΩ @ 25 A, 10 V
Continuous Drain Current (ID): 9.4 A @ 25°C, 63 A @ 100°C
Input Capacitance (Ciss): 1900 pF @ 50 V
Power Dissipation (Pd): 114 W @ 100°C
Quality and Safety Features
RoHS3 compliant
Stringent quality control and testing procedures
Compatibility
Compatible with a wide range of power conversion applications, such as:
- Switching power supplies
- Motor drives
- Inverters
- Power factor correction circuits
Application Areas
Power conversion and control
Industrial electronics
Automotive electronics
Renewable energy systems
Product Lifecycle
Currently in production
No known plans for discontinuation
Replacement or upgrade options may be available from Infineon
Several Key Reasons to Choose This Product
Excellent efficiency and thermal performance due to low on-state resistance
Compact and space-saving package for high-density designs
Reliable and robust design for demanding applications
Suitable for a wide range of power conversion applications
Backed by the reputation and quality assurance of Infineon Technologies
