Manufacturer Part Number
BSC155N06NDATMA1
Manufacturer
Infineon Technologies
Introduction
The BSC155N06NDATMA1 is a dual N-channel MOSFET transistor from Infineon Technologies' OptiMOS-T2 series. It is designed for power management and control applications.
Product Features and Performance
60V drain-source voltage (Vdss)
5mOhm maximum on-resistance (Rds(on)) at 17A, 10V
20A continuous drain current (Id) at 25°C
2250pF maximum input capacitance (Ciss) at 30V
4V maximum gate threshold voltage (Vgs(th)) at 20A
29nC maximum gate charge (Qg) at 10V
Wide operating temperature range of -55°C to 175°C
Product Advantages
Efficient power management through low on-resistance
Compact surface-mount package for high-density designs
Robust performance across a wide temperature range
Optimized for power control and switching applications
Key Technical Parameters
Drain-Source Voltage (Vdss): 60V
On-Resistance (Rds(on)): 15.5mOhm
Continuous Drain Current (Id): 20A
Input Capacitance (Ciss): 2250pF
Gate Threshold Voltage (Vgs(th)): 4V
Gate Charge (Qg): 29nC
Quality and Safety Features
RoHS3 compliant
Designed and manufactured to high quality standards
Compatibility
Suitable for a wide range of power management and control applications
Application Areas
Power supplies
Motor drives
Lighting control
Industrial automation
Automotive electronics
Product Lifecycle
Current product, not nearing discontinuation
Replacement or upgrade options available from Infineon
Key Reasons to Choose
Efficient power management through low on-resistance
Compact surface-mount package for high-density designs
Robust performance across a wide temperature range
Optimized for power control and switching applications
High-quality design and manufacturing from a trusted manufacturer
