Manufacturer Part Number
BSC160N10NS3GATMA1
Manufacturer
Infineon Technologies
Introduction
High-performance N-channel MOSFET with low on-resistance, suitable for various power conversion applications.
Product Features and Performance
Extremely low on-resistance for improved efficiency
High power density and thermal performance
Optimized for high-frequency switching applications
Excellent body diode characteristics and fast switching
Robust design for high reliability and ruggedness
Product Advantages
Industry-leading low on-resistance for power savings
High power density enables compact designs
Fast switching and low gate charge for high-frequency operation
Reliable and rugged design for long-term use
Key Technical Parameters
Drain-Source Voltage (Vdss): 100V
On-Resistance (Rds(on)): 16mΩ @ 33A, 10V
Continuous Drain Current (Id): 8.8A (Ta), 42A (Tc)
Input Capacitance (Ciss): 1700pF @ 50V
Power Dissipation (Pc): 60W (Tc)
Quality and Safety Features
ROHS3 compliant for environmental friendliness
Comprehensive quality and reliability testing
Compatibility
Suitable for a wide range of power conversion applications
Application Areas
Switch-mode power supplies
Motor drives
Lighting and industrial control systems
Telecommunications and data center equipment
Product Lifecycle
Current product, no discontinuation plans
Replacements and upgrades available as needed
Key Reasons to Choose This Product
Industry-leading low on-resistance for improved efficiency
High power density and thermal performance for compact designs
Fast switching and low gate charge for high-frequency operation
Reliable and rugged design for long-term use
Comprehensive quality and safety features
