Manufacturer Part Number
BFP450H6327XTSA1
Manufacturer
Infineon Technologies
Introduction
High-frequency NPN Silicon Bipolar Transistor
Product Features and Performance
Optimized for 1.8GHz to 2.4GHz wireless applications
High transition frequency of 24GHz
High gain of 15.5dB
Low noise figure of 1.25dB at 1.8GHz
Compact SOT-343 surface mount package
Product Advantages
Excellent high-frequency performance
Compact size for space-constrained designs
Reliable operation up to 150°C
Key Technical Parameters
Power rating: 450mW
Collector-emitter breakdown voltage: 5V
Collector current: 100mA
DC current gain: 60 min. at 50mA, 4V
Operating temperature: -55°C to 150°C
Quality and Safety Features
RoHS3 compliant
Manufactured in an ISO certified facility
Compatibility
Suitable for use in 1.8GHz to 2.4GHz wireless applications, such as:
Cellular base stations
Wireless LAN
Bluetooth
ISM band radio
Application Areas
Wireless communications
RF amplifier circuits
Oscillator and mixer circuits
Product Lifecycle
This product is currently in production and is not nearing discontinuation. Replacement or upgraded versions may be available in the future.
Key Reasons to Choose This Product
Excellent high-frequency performance for wireless applications
Compact size and surface mount package for space-constrained designs
Reliable operation across a wide temperature range
RoHS3 compliance for environmentally friendly use
Backed by Infineon's reputation for quality and reliability
