Manufacturer Part Number
BFP420FH6327
Manufacturer
Infineon Technologies
Introduction
Infineon's BFP420FH6327 is a high-performance NPN bipolar junction transistor (BJT) designed for radio frequency (RF) applications.
Product Features and Performance
Operating temperature up to 150°C
Power handling up to 210mW
Collector-emitter breakdown voltage of 4.5V
Collector current of up to 60mA
High transition frequency of 25GHz
High gain of 37dB
Low noise figure of 0.9dB to 2.2dB across 150MHz to 5.5GHz
Product Advantages
Excellent high-frequency performance
Robust thermal and electrical characteristics
Suitable for a wide range of RF applications
Key Technical Parameters
Transistor Type: NPN
DC Current Gain (hFE): 60 @ 5mA, 4V
Frequency Transition: 25GHz
Gain: 37dB
Noise Figure: 0.9dB ~ 2.2dB @ 150MHz ~ 5.5GHz
Quality and Safety Features
Surface mount package (4-TSFP)
RoHS compliance status not specified
Compatibility
Suitable for a variety of RF applications, such as amplifiers, mixers, and oscillators
Application Areas
Wireless communication systems
Radio frequency (RF) circuits
Broadband communication equipment
Product Lifecycle
The current status and availability of replacements or upgrades for this product are not specified.
Key Reasons to Choose This Product
High-frequency performance with a transition frequency of 25GHz
Low noise figure of 0.9dB to 2.2dB across a wide frequency range
Robust thermal and electrical characteristics for reliable operation
Compact surface mount packaging suitable for various RF applications
