Manufacturer Part Number
BFP450H6327
Manufacturer
Infineon Technologies
Introduction
High-frequency NPN bipolar transistor for radio frequency (RF) applications
Product Features and Performance
Frequency transition of 24GHz
Gain of 15.5dB
Noise figure of 1.25dB at 1.8GHz
Capable of handling up to 100mA of collector current
Designed for surface mount applications
Product Advantages
Excellent high-frequency performance
Low noise characteristics
Compact surface mount package
Reliable and robust design
Key Technical Parameters
Power rating: 450mW
Collector-emitter breakdown voltage: 5V
DC current gain (hFE): min. 60 @ 50mA, 4V
Operating temperature range: -55°C to +150°C
Quality and Safety Features
Complies with RoHS requirements (exemptions may apply)
Reliable performance in a wide range of environmental conditions
Compatibility
Suitable for various RF and wireless communication applications
Application Areas
Radio frequency (RF) amplifiers
Wireless communication systems
Radar and satellite communication equipment
Product Lifecycle
Currently in production
No immediate plans for discontinuation
Replacement or upgrade options may be available upon request
Key Reasons to Choose This Product
Excellent high-frequency performance for RF applications
Low noise characteristics for improved signal quality
Compact and reliable surface mount design
Proven track record and support from Infineon Technologies
