BFP450E6327 - Infineon Technologies

Manufacturer Part Number

BFP450E6327

Manufacturer

Infineon Technologies

Introduction

High-frequency NPN bipolar transistor for RF amplifier and oscillator applications up to 24 GHz.

Product Features and Performance

High transition frequency of 24 GHz

Low noise figure of 1.25 dB at 1.8 GHz

High power gain of 15.5 dB

Collector-emitter breakdown voltage of up to 5 V

Collector current rating of up to 100 mA

Maximum power dissipation of 450 mW

Operating temperature range up to 150°C

Product Advantages

Suitable for high-frequency RF applications

Excellent noise performance

High power gain and efficiency

Reliable operation at elevated temperatures

Key Technical Parameters

Transistor Type: NPN

DC Current Gain (hFE): 60 min. @ 50 mA, 4 V

Frequency Transition: 24 GHz

Gain: 15.5 dB

Noise Figure: 1.25 dB @ 1.8 GHz

Voltage Collector Emitter Breakdown (Max): 5 V

Current Collector (Ic) (Max): 100 mA

Power Max: 450 mW

Operating Temperature: 150°C (TJ)

Quality and Safety Features

Compliant with RoHS directives

Reliable and robust design for industrial applications

Compatibility

Surface mount package (SC-82A, SOT-343)

Widely compatible with various RF circuit designs

Application Areas

RF amplifiers and oscillators

Wireless communication systems

Radar and instrumentation applications

Product Lifecycle

This product is an active and widely used component

Replacement or upgrade options may be available from Infineon or other manufacturers

Key Reasons to Choose This Product

High-frequency performance up to 24 GHz

Excellent noise figure and power gain

Reliable operation at high temperatures

Compact surface mount packaging

Widely compatible with RF circuit designs

Proven reliability and quality from Infineon Technologies