BFP420FH6327XTSA1 - Infineon Technologies

Manufacturer Part Number

BFP420FH6327XTSA1

Manufacturer

Infineon Technologies

Introduction

High-performance NPN silicon bipolar RF transistor

Optimized for use in RF power amplifier applications

Product Features and Performance

Excellent high-frequency performance with a transition frequency of 25GHz

High gain of 19.5dB

Low noise figure of 1.1dB at 1.8GHz

Capable of operating at up to 150°C junction temperature

Power handling capability of up to 160mW

Product Advantages

Suitable for high-frequency RF power amplifier designs

Robust performance across a wide temperature range

Compact surface mount package for efficient board space utilization

Key Technical Parameters

Voltage Collector Emitter Breakdown (Max): 5.5V

Current Collector (Ic) (Max): 35mA

DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 4V

Quality and Safety Features

RoHS3 compliant

Reliable semiconductor manufacturing processes

Compatibility

Suitable for a wide range of RF power amplifier applications

Application Areas

Cellular base stations

Wireless infrastructure equipment

RF power amplifiers

Product Lifecycle

Currently in active production

Replacement or upgrade options available from Infineon

Key Reasons to Choose This Product

Excellent high-frequency performance with a high transition frequency

Low noise figure for improved signal quality

Robust thermal performance allowing operation at high temperatures

Compact surface mount package for efficient board space utilization

Reliable and RoHS-compliant manufacturing