SNSS30201MR6T1G - onsemi

Manufacturer Part Number

SNSS30201MR6T1G

Manufacturer

onsemi

Introduction

High-performance NPN bipolar junction transistor (BJT) in a small surface-mount package for use in power amplifier, switching, and signal conditioning applications.

Product Features and Performance

High DC current gain of 300 at 500mA, 5V

Low collector-emitter saturation voltage of 200mV at 100mA, 1A

High transition frequency of 300MHz

Power dissipation capability of 535mW

Collector-emitter breakdown voltage of 30V

Collector current of up to 2A

Product Advantages

Compact surface-mount package

High performance in a small footprint

Suitable for a wide range of power, switching, and amplification applications

Key Technical Parameters

Power Max: 535mW

Voltage Collector Emitter Breakdown (Max): 30V

Current Collector (Ic) (Max): 2A

Current Collector Cutoff (Max): 100nA

Vce Saturation (Max) @ Ib, Ic: 200mV @ 100mA, 1A

Transistor Type: NPN

DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 500mA, 5V

Frequency Transition: 300MHz

Quality and Safety Features

RoHS3 compliant

Reliable performance in various operating conditions

Compatibility

Suitable for surface-mount applications

Can be used in a wide range of power, switching, and amplification circuits

Application Areas

Power amplifiers

Switching circuits

Signal conditioning applications

Product Lifecycle

Currently in active production

No known plans for discontinuation

Replacements and upgrades may be available in the future

Key Reasons to Choose This Product

High performance in a compact package

Suitable for a wide range of applications

Reliable and RoHS3 compliant

Can be easily integrated into surface-mount designs