SNSS35200MR6T1G - onsemi

Manufacturer Part Number

SNSS35200MR6T1G

Manufacturer

onsemi

Introduction

High-performance PNP bipolar junction transistor (BJT) in a small SOT-23-6 package, suitable for power management and switching applications.

Product Features and Performance

Low collector-emitter saturation voltage (VCEsat) of 310mV at 2A collector current

High DC current gain (hFE) of 100 at 1.5A collector current

Frequency transition (fT) of 100MHz

Power dissipation capability of 625mW

Product Advantages

Compact size for space-constrained designs

High efficiency power management

Fast switching capability

Key Technical Parameters

Collector-Emitter Breakdown Voltage (VCEO): 35V

Collector Current (IC): 2A

Collector Cutoff Current (ICBO): 100nA

Power Dissipation: 625mW

Quality and Safety Features

RoHS3 compliant

Tape and reel packaging for automated assembly

Compatibility

Compatible with standard SOT-23-6 footprint

Application Areas

Power management circuits

Switching applications

Amplifier and driver circuits

Product Lifecycle

Current production, no known plans for discontinuation

Replacements and upgrades may be available from onsemi

Key Reasons to Choose This Product

Excellent power handling and efficiency

Fast switching capability for high-speed circuits

Small footprint for compact design

Proven reliability and quality from onsemi