2STF1340 - STMicroelectronics

Manufacturer Part Number

2STF1340

Manufacturer

STMicroelectronics

Introduction

Discrete Semiconductor Transistor

Single Bipolar Junction Transistor (BJT)

Product Features and Performance

RoHS3 Compliant

Surface Mount Package (SOT-89-3)

Maximum Power Dissipation: 1.4W

Maximum Collector-Emitter Voltage: 40V

Maximum Collector Current: 3A

Collector Cutoff Current: 100nA (max)

Collector-Emitter Saturation Voltage: 350mV @ 150mA, 3A

DC Current Gain (hFE): 180 (min) @ 1A, 2V

Transition Frequency: 100MHz

Product Advantages

High power handling capability

Low collector-emitter saturation voltage

High DC current gain

Wide operating temperature range (-55°C to 150°C)

Key Technical Parameters

Package: SOT-89-3

Operating Temperature: -55°C to 150°C

Power Dissipation: 1.4W

Collector-Emitter Voltage: 40V

Collector Current: 3A

DC Current Gain: 180 (min)

Transition Frequency: 100MHz

Quality and Safety Features

RoHS3 Compliant

Reliable surface mount package

Compatibility

Suitable for use in a variety of electronic circuits and applications where a high-performance NPN bipolar junction transistor is required.

Application Areas

Power amplifiers

Switching circuits

Voltage regulators

Motor control

Industrial electronics

Product Lifecycle

This product is an active and widely available component from STMicroelectronics. There are no indications of it being nearing discontinuation, and replacement or upgraded options are readily available.

Key Reasons to Choose This Product

High power handling capability for demanding applications

Low collector-emitter saturation voltage for efficient operation

High DC current gain for amplification and switching applications

Wide operating temperature range for industrial and automotive use

Reliable surface mount package for robust and compact design

RoHS3 compliance for environmentally-friendly applications