Manufacturer Part Number
2STD1665T4
Manufacturer
STMicroelectronics
Introduction
High-performance NPN Bipolar Junction Transistor (BJT) in DPAK package
Product Features and Performance
High power capability up to 15W
High voltage rating up to 65V
High collector current up to 6A
Low collector-emitter saturation voltage
High current gain up to 150
Product Advantages
Excellent thermal management due to DPAK package
Reliable and robust design
Suitable for a wide range of power electronics applications
Key Technical Parameters
Collector-Emitter Breakdown Voltage (VCEO): 65V
Collector Current (IC): 6A
Collector-Emitter Saturation Voltage (VCE(sat)): 380mV
Current Gain (hFE): 150
Quality and Safety Features
RoHS3 compliant
Meets industrial safety standards
Compatibility
Suitable for surface mount applications
Application Areas
Switching power supplies
Motor drivers
Lighting control
Industrial automation
Product Lifecycle
Currently in production
Replacement or upgrade options available
Key Reasons to Choose This Product
High power and voltage handling capability
Excellent thermal management
Reliable and robust design
Suitable for a wide range of power electronics applications