2STBN15D100 - STMicroelectronics

Manufacturer Part Number

2STBN15D100

Manufacturer

STMicroelectronics

Introduction

High-power NPN Darlington transistor

Product Features and Performance

Power handling up to 70W

Collector-emitter breakdown voltage up to 100V

Collector current up to 12A

Very high DC current gain (hFE) of 750 minimum at 3A, 3V

Low collector-emitter saturation voltage (VCEsat) of 1.3V at 4mA, 4A

Product Advantages

Suitable for high-current, high-power switching and amplifier applications

Robust design with high reliability

Compact DPAK (TO-263) surface-mount package

Key Technical Parameters

Voltage Collector Emitter Breakdown (Max): 100V

Current Collector (Ic) (Max): 12A

Current Collector Cutoff (Max): 100A

Vce Saturation (Max) @ Ib, Ic: 1.3V @ 4mA, 4A

DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 3A, 3V

Quality and Safety Features

RoHS3 compliant

Designed and manufactured to high quality standards

Compatibility

DPAK (TO-263) surface-mount package

Application Areas

High-current power switching and amplifier circuits

Motor control

Power supplies

Industrial controls

Product Lifecycle

Currently in production

Replacements and upgrades may be available in the future

Key Reasons to Choose This Product

High power handling and current capacity

Excellent electrical characteristics with very high current gain and low saturation voltage

Robust and reliable design in a compact surface-mount package

Suitable for a wide range of high-power, high-current applications