2STA2121 - STMicroelectronics

Manufacturer Part Number

2STA2121

Manufacturer

STMicroelectronics

Introduction

Discrete Semiconductor Product

Bipolar Junction Transistor (BJT) Single

Product Features and Performance

High Power Handling Capability: 220W

High Voltage Withstanding: 250V Collector-Emitter Breakdown Voltage

High Current Capability: 17A Collector Current (Max)

High DC Current Gain: 80 (Min) @ 1A, 5V

High Switching Speed: 25MHz Transition Frequency

Product Advantages

Robust and Reliable Performance

Suitable for High Power Applications

Optimal for High Voltage and High Current Circuits

Key Technical Parameters

Voltage Collector Emitter Breakdown (Max): 250V

Current Collector (Ic) (Max): 17A

Current Collector Cutoff (Max): 5A (ICBO)

Vce Saturation (Max) @ Ib, Ic: 3V @ 800mA, 8A

Transistor Type: PNP

DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 1A, 5V

Frequency Transition: 25MHz

Quality and Safety Features

RoHS3 Compliant

Suitable for High Temperature Operations: 150°C (TJ)

Compatibility

Package: TO-264-3, TO-264AA

Mounting Type: Through Hole

Application Areas

High Power Electronics

Industrial Controls

Switching Power Supplies

Motor Drives

Inverters

Product Lifecycle

Currently in Production

Replacement or Upgrade Options Available

Key Reasons to Choose This Product

Excellent Power Handling Capability

High Voltage and Current Ratings

High Switching Speed Performance

Reliable and Robust Design

Suitable for Demanding High Power Applications

RoHS Compliance for Environmental Friendliness

Wide Compatibility and Through-Hole Mounting Option