Manufacturer Part Number
ZX5T1951GTA
Manufacturer
Diodes Incorporated
Introduction
High-performance PNP bipolar junction transistor (BJT) in a compact surface mount package.
Product Features and Performance
Operates over a wide temperature range of -55°C to 150°C
Capable of handling up to 6A of collector current
Breakdown voltage of up to 60V
Transition frequency of 120MHz
Low collector-emitter saturation voltage of 260mV @ 5A
Product Advantages
Excellent power handling capability
High current and voltage ratings
Fast switching speed
Compact surface mount package
Key Technical Parameters
Power: 1.6W
Collector-Emitter Breakdown Voltage: 60V
Collector Current (Max): 6A
Collector Cutoff Current: 50nA
DC Current Gain: 100 @ 2A, 2V
Quality and Safety Features
RoHS3 compliant
Reliable performance in harsh environments
Compatibility
Compatible with a wide range of surface mount applications
Application Areas
Power amplifiers
Switching circuits
Motor control
Industrial automation
Telecommunications equipment
Product Lifecycle
Currently available
No known plans for discontinuation
Replacements and upgrades may be available in the future
Key Reasons to Choose This Product
Excellent power handling capability
High current and voltage ratings
Fast switching speed
Compact surface mount package
Reliable performance in harsh environments
Compatibility with a wide range of applications