Manufacturer Part Number
ZX5T851GTA
Manufacturer
Diodes Incorporated
Introduction
High-performance NPN bipolar junction transistor (BJT) for power amplifier and switching applications.
Product Features and Performance
High collector-emitter breakdown voltage of 60V
High collector current rating of 6A
Low collector-emitter saturation voltage of 260mV @ 6A
High current gain of 100 @ 2A, 1V
High transition frequency of 130MHz
Wide operating temperature range of -55°C to 150°C
3W power handling capability
Product Advantages
Excellent power handling and switching performance
Compact surface mount package
Wide temperature operating range
Key Technical Parameters
Voltage Collector Emitter Breakdown (Max): 60V
Current Collector (Ic) (Max): 6A
Power Max: 3W
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 2A, 1V
Frequency Transition: 130MHz
Quality and Safety Features
RoHS3 compliant
Reliable performance in harsh environments
Compatibility
Compatible with TO-261-4, TO-261AA package
Application Areas
Power amplifiers
Switching circuits
Motor control
Industrial electronics
Product Lifecycle
Currently available product
No plans for discontinuation
Several Key Reasons to Choose This Product
High power handling and switching capability
Compact surface mount package
Wide temperature operating range
Excellent electrical performance metrics
RoHS3 compliance for environmentally-friendly use