ZX5T3ZTA - Diodes Incorporated

Manufacturer Part Number

ZX5T3ZTA

Manufacturer

Diodes Incorporated

Introduction

Discrete Semiconductor Product

Bipolar Junction Transistor (BJT) Single

Product Features and Performance

RoHS3 Compliant

Surface Mount Package (SOT-89-3)

Wide Operating Temperature Range: -55°C to 150°C

High Power Handling Capability: 2.1W

High Voltage Breakdown: 40V

High Collector Current: 5.5A

Low Collector-Emitter Saturation Voltage: 185mV @ 550mA, 5.5A

High DC Current Gain: 200 @ 500mA, 2V

High Transition Frequency: 152MHz

Product Advantages

Compact surface mount package

Robust thermal performance

High power and voltage handling

Excellent electrical characteristics

Key Technical Parameters

Package: SOT-89-3

Voltage Collector Emitter Breakdown (Max): 40V

Current Collector (Ic) (Max): 5.5A

Vce Saturation (Max) @ Ib, Ic: 185mV @ 550mA, 5.5A

DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V

Frequency Transition: 152MHz

Quality and Safety Features

RoHS3 Compliant

Compatibility

Compatible with various electronic systems and circuits requiring high-performance PNP bipolar transistors

Application Areas

Power amplifiers

Switching circuits

Audio circuits

Industrial controls

Automotive electronics

Product Lifecycle

This product is currently in production and widely available.

Replacements and upgrades may be available from Diodes Incorporated or other manufacturers.

Key Reasons to Choose This Product

Compact surface mount package for space-constrained designs

Exceptional power handling and voltage capability

Excellent electrical characteristics, including low saturation voltage and high current gain

Robust thermal performance for reliable operation in demanding environments

RoHS3 compliance for use in eco-friendly applications