NVH4L080N120SC1 - onsemi

Manufacturer Part Number

NVH4L080N120SC1

Manufacturer

onsemi

Introduction

This product is a high-performance, N-channel silicon carbide (SiCFET) power MOSFET from onsemi, designed for demanding automotive and industrial applications.

Product Features and Performance

High voltage rating of 1200V

Low on-resistance of 110mΩ at 20A, 20V

High continuous drain current of 29A at 25°C

Wide operating temperature range of -55°C to 175°C

Low gate charge of 56nC at 20V

Fast switching speed and low switching losses

Product Advantages

Excellent efficiency and thermal performance

Robust design for harsh environments

Suitable for high-power, high-voltage applications

Reliable and long-lasting operation

Key Technical Parameters

Drain-to-Source Voltage (Vdss): 1200V

Gate-to-Source Voltage (Vgs): +25V/-15V

On-Resistance (Rds(on)): 110mΩ @ 20A, 20V

Continuous Drain Current (Id): 29A @ 25°C

Input Capacitance (Ciss): 1670pF @ 800V

Power Dissipation (Tc): 170mW

Quality and Safety Features

RoHS3 compliant

AEC-Q101 qualified for automotive applications

Robust package design (TO-247-4L)

Compatibility

This SiC MOSFET is designed to be compatible with a wide range of power electronics circuits and systems, including motor drives, power converters, and inverters.

Application Areas

Automotive powertrain and power conversion systems

Industrial motor drives and power supplies

Renewable energy systems, such as solar inverters

High-voltage, high-power electronic systems

Product Lifecycle

This product is a current offering from onsemi and is not nearing discontinuation. Replacement or upgrade options may be available from onsemi as technology evolves.

Key Reasons to Choose This Product

Excellent efficiency and thermal performance for high-power, high-voltage applications

Robust design and wide operating temperature range for harsh environments

Fast switching speed and low switching losses for improved system efficiency

AEC-Q101 qualification for reliable automotive applications

Compatibility with a wide range of power electronics circuits and systems