IPL60R075CFD7AUMA1 - Infineon Technologies

Manufacturer Part Number

IPL60R075CFD7AUMA1

Manufacturer

Infineon Technologies

Introduction

This product is a discrete semiconductor device, specifically a transistor in the FET (Field-Effect Transistor) and MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) category.

Product Features and Performance

N-Channel MOSFET

600V drain-to-source voltage

75 mOhm maximum on-resistance at 15.1A and 10V gate-to-source voltage

33A continuous drain current at 25°C case temperature

2721 pF maximum input capacitance at 400V drain-to-source voltage

189W maximum power dissipation at 25°C case temperature

Operating temperature range of -40°C to 150°C junction temperature

Product Advantages

High efficiency due to low on-resistance

Suitable for high-voltage applications

Robust design and high reliability

Key Technical Parameters

Drain-to-Source Voltage (Vdss): 600V

Maximum Gate-to-Source Voltage (Vgs): ±20V

On-Resistance (Rds(on)): 75 mOhm

Continuous Drain Current (Id): 33A

Input Capacitance (Ciss): 2721 pF

Power Dissipation (Ptot): 189W

Quality and Safety Features

RoHS3 compliant

Suitable for surface mount assembly

Compatibility

Packaged in a PG-VSON-4 surface mount package

Application Areas

Suitable for high-voltage, high-power applications such as power supplies, motor drives, and inverters

Product Lifecycle

This product is an active and available part. No information about discontinuation or replacement is provided.

Key Reasons to Choose This Product

High efficiency due to low on-resistance

Suitable for high-voltage applications

Robust design and high reliability

RoHS3 compliance for environmental safety

Surface mount packaging for easy integration