Manufacturer Part Number
IPL60R065P7AUMA1
Manufacturer
Infineon Technologies
Introduction
High-performance N-channel MOSFET with CoolMOS P7 technology
Product Features and Performance
600V drain-to-source voltage
65mΩ maximum on-resistance
41A continuous drain current at 25°C
Low gate charge and input capacitance
Optimized for high-frequency, high-power density applications
Product Advantages
Improved efficiency and reduced system costs
Compact design with high power density
Excellent switching and conduction performance
Reliable and robust design
Key Technical Parameters
Vdss: 600V
Vgs (max): ±20V
Rds(on) (max): 65mΩ
Id (continuous): 41A at 25°C
Input capacitance (Ciss): 2895pF
Power dissipation (max): 201W
Quality and Safety Features
RoHS3 compliant
Designed and manufactured to high quality standards
Compatibility
Surface mount package (PG-VSON-4)
Compatible with various high-frequency, high-power density applications
Application Areas
Switch-mode power supplies
Motor drives
Uninterruptible power supplies (UPS)
Solar inverters
Industrial equipment
Product Lifecycle
Current production, no discontinuation planned
Replacement and upgrade options available
Key Reasons to Choose This Product
Excellent efficiency and power density performance
Reliable and robust design for high-stress applications
Optimized for high-frequency, high-power density systems
Wide operating temperature range (-40°C to 150°C)
Compact surface mount package for space-constrained designs