NVD6415ANLT4G - onsemi

Manufacturer Part Number

NVD6415ANLT4G

Manufacturer

onsemi

Introduction

High-performance n-channel power MOSFET suitable for automotive and industrial applications.

Product Features and Performance

Wide operating temperature range of -55°C to 175°C

Low on-resistance (RDS(on)) of 52mΩ @ 10A, 10V

High drain current capacity of 23A @ 25°C

Low input capacitance of 1024pF @ 25V

High power dissipation of 83W @ Tc

Product Advantages

Excellent thermal performance

Robust design for harsh environments

High efficiency and low power loss

Suitable for high-current and high-power applications

Key Technical Parameters

Drain-to-Source Voltage (VDS): 100V

Gate-to-Source Voltage (VGS): ±20V

Threshold Voltage (VGS(th)): 2V @ 250A

Drive Voltage (VGS): 4.5V (max RDS(on)), 10V (min RDS(on))

Gate Charge (Qg): 20nC @ 4.5V

Quality and Safety Features

RoHS3 compliant

Automotive-grade AEC-Q101 qualified

Compatibility

Surface mount (DPAK) package

Suitable for automotive and industrial applications

Application Areas

Power management

Motor control

Switching power supplies

Automotive electronics

Product Lifecycle

In active production

Replacements and upgrades may be available

Key Reasons to Choose This Product

Excellent thermal and electrical performance

Robust design for harsh environments

High efficiency and low power loss

Suitable for high-current, high-power applications

Automotive-grade quality and safety features