NVD5C648NLT4G - onsemi

Manufacturer Part Number

NVD5C648NLT4G

Manufacturer

onsemi

Introduction

High-performance MOSFET transistor designed for automotive and industrial applications.

Product Features and Performance

N-channel MOSFET with 60V drain-to-source voltage

Ultra-low on-resistance of 4.1 mOhm at 45A, 10V

Continuous drain current of 18A at 25°C ambient temperature

High power dissipation capability of 3.1W at 25°C ambient and 72W at case temperature

Fast switching speed with low gate charge of 39 nC at 10V

Wide operating temperature range of -55°C to 175°C

Product Advantages

Excellent thermal performance for efficient heat dissipation

Robust design for reliable operation in demanding applications

Optimized for high-current, high-frequency switching circuits

Compact surface-mount package for space-efficient board layout

Key Technical Parameters

Drain-to-Source Voltage (Vdss): 60V

Gate-to-Source Voltage (Vgs): ±20V

On-Resistance (Rds(on)): 4.1 mOhm @ 45A, 10V

Continuous Drain Current (Id): 18A @ 25°C, 89A @ case temperature

Input Capacitance (Ciss): 2900 pF @ 25V

Gate Charge (Qg): 39 nC @ 10V

Quality and Safety Features

RoHS3 compliant

AEC-Q101 qualified for automotive applications

Compatibility

Surface-mount DPAK (TO-252-3) package

Suitable for high-current, high-frequency switching applications

Application Areas

Automotive electronics (e.g., power steering, transmission, hybrid/electric vehicles)

Industrial motor drives and power supplies

Switching-mode power supplies

Telecommunications and networking equipment

Product Lifecycle

Currently in production

Replacements and upgrades may be available in the future

Key Reasons to Choose This Product

Exceptional thermal performance and power handling capability

Extremely low on-resistance for high efficiency

Robust design for reliable operation in demanding environments

Compact surface-mount package for space-constrained applications

Automotive-grade quality and safety compliance