Manufacturer Part Number
NVD5C464NT4G
Manufacturer
onsemi
Introduction
High-performance N-channel enhancement-mode power MOSFET
Designed for high-current, high-frequency switching applications
Product Features and Performance
Extremely low on-resistance for high efficiency
Fast switching speed for high-frequency operation
Rugged design for automotive and industrial applications
Low gate charge for energy-efficient switching
Product Advantages
Low power losses due to low on-resistance
High reliability and robustness for demanding applications
Enables high-frequency, high-efficiency power conversion
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 40V
Gate-to-Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 5.8mΩ @ 30A, 10V
Continuous Drain Current (Id): 16A (Ta), 59A (Tc)
Input Capacitance (Ciss): 1200pF @ 25V
Power Dissipation (Max): 3W (Ta), 40W (Tc)
Quality and Safety Features
ROHS3 compliant
Automotive-grade AEC-Q101 qualified
Compatibility
Compatible with a wide range of power supply, motor control, and other high-current switching applications
Application Areas
Automotive electronics
Industrial power conversion
Motor drives
Power supplies
Product Lifecycle
Currently in production
No plans for discontinuation
Replacement or upgrade options available if required
Key Reasons to Choose This Product
Exceptional efficiency and performance for high-current, high-frequency applications
Robust and reliable design for demanding automotive and industrial environments
Enables high-power, high-efficiency power conversion systems
Proven track record and support from a leading semiconductor manufacturer