Manufacturer Part Number
NVHL040N120SC1
Manufacturer
onsemi
Introduction
High-performance silicon carbide (SiCFET) power MOSFET for industrial and automotive applications
Product Features and Performance
Optimized for high-efficiency power conversion
Low on-resistance and fast switching
Wide operating temperature range of -55°C to 175°C
High drain-source voltage rating of 1200V
High current handling capability up to 60A
Product Advantages
Excellent power efficiency
Robust and reliable performance
Compact and space-saving design
Suitable for high-voltage, high-power applications
Key Technical Parameters
Drain-Source Voltage (Vdss): 1200V
Maximum Gate-Source Voltage (Vgs): +25V, -15V
On-Resistance (Rds(on)): 56mΩ @ 35A, 20V
Continuous Drain Current (Id): 60A @ 25°C (Tc)
Input Capacitance (Ciss): 1781pF @ 800V
Power Dissipation (Pd): 348W @ 25°C (Tc)
Quality and Safety Features
RoHS3 compliant
Automotive-grade AEC-Q101 qualification
Compatibility
TO-247-3 package
Suitable for industrial and automotive applications
Application Areas
High-efficiency power conversion
Motor drives
Inverters
Converters
Solar power systems
Electric vehicle (EV) systems
Product Lifecycle
Current product model
Replacements and upgrades may be available in the future
Key Reasons to Choose This Product
Excellent power efficiency and performance
Robust and reliable operation in high-temperature environments
Compact and space-saving design
Suitable for high-power, high-voltage applications
Automotive-grade quality and safety features