STO36N60M6 - STMicroelectronics

Manufacturer Part Number

STO36N60M6

Manufacturer

STMicroelectronics

Introduction

High-performance N-channel 600V MOSFET in PowerSFN8 package

Product Features and Performance

600V breakdown voltage

99mΩ maximum on-resistance

30A continuous drain current at 25°C

1960pF maximum input capacitance

230W maximum power dissipation

Product Advantages

Excellent performance-to-cost ratio

Compact PowerSFN8 package

Suitable for high-voltage, high-power applications

Key Technical Parameters

Drain-to-Source Voltage (Vdss): 600V

Gate-to-Source Voltage (Vgs): ±25V

On-Resistance (Rds(on)): 99mΩ @ 15A, 10V

Drain Current (Id): 30A @ 25°C

Input Capacitance (Ciss): 1960pF @ 100V

Power Dissipation (Pd): 230W @ 25°C

Quality and Safety Features

RoHS3 compliant

Designed for high reliability and safety

Compatibility

Suitable for use in a wide range of high-voltage, high-power applications

Application Areas

Switch-mode power supplies

Motor drives

Inverters

High-voltage amplifiers

Product Lifecycle

Currently in active production

No plans for discontinuation

Replacements and upgrades available

Key Reasons to Choose This Product

Excellent performance-to-cost ratio

Compact and efficient PowerSFN8 package

Suitable for high-voltage, high-power applications

Reliable and RoHS3 compliant

Availability of replacements and upgrades