Manufacturer Part Number
NVBG040N120SC1
Manufacturer
onsemi
Introduction
High-performance SiCFET (Silicon Carbide MOSFET) optimized for industrial and automotive applications
Product Features and Performance
Drain to Source Voltage (Vdss) of 1200V
Continuous Drain Current (Id) of 60A at 25°C
Low On-Resistance (Rds(on)) of 56mΩ at 35A, 20V
High Power Dissipation of 357W at Tc
Wide Operating Temperature Range of -55°C to 175°C
Product Advantages
Excellent power efficiency due to low on-resistance
High voltage and current handling capability
Robust design for harsh environments
Faster switching speed compared to traditional silicon MOSFETs
Key Technical Parameters
Vgs (Max): +25V, -15V
Input Capacitance (Ciss): 1789pF at 800V
Gate Charge (Qg): 106nC at 20V
Vgs(th) (Max): 4.3V at 10mA
Quality and Safety Features
AEC-Q101 qualified for automotive applications
RoHS3 compliant
Compatibility
Surface mount package (D2PAK-7)
Suitable for industrial and automotive applications
Application Areas
Power supplies
Motor drives
Inverters
Electric vehicles
Renewable energy systems
Product Lifecycle
This product is an active and widely used SiCFET solution
No plans for discontinuation, with availability of replacements and upgrades
Key Reasons to Choose This Product
Excellent power efficiency and high voltage/current handling
Robust design for harsh environments
Fast switching speed for improved system performance
Automotive-grade quality and safety features
Broad compatibility and application areas