Manufacturer Part Number
NVB110N65S3F
Manufacturer
onsemi
Introduction
High-performance MOSFET transistor for automotive and industrial applications
Product Features and Performance
650V N-channel MOSFET
RDS(on) as low as 110mΩ at 15A, 10V
Continuous drain current of 30A at 25°C case temperature
Robust AEC-Q101 qualified design
SuperFET III technology for improved performance
Product Advantages
Excellent power efficiency
High power density
Reliable operation in harsh environments
Key Technical Parameters
Drain-Source Voltage (Vdss): 650V
Gate-Source Voltage (Vgs): ±30V
On-resistance (RDS(on)): 110mΩ @ 15A, 10V
Continuous Drain Current (ID): 30A @ 25°C
Input Capacitance (Ciss): 2560pF @ 400V
Power Dissipation (Ptot): 240W @ Tc
Quality and Safety Features
RoHS3 compliant
AEC-Q101 qualified for automotive applications
Robust DPAK-3 (TO-263-3) package
Compatibility
Suitable for a wide range of automotive and industrial applications
Application Areas
Motor drives
Power supplies
Inverters
Converters
Industrial and automotive electronics
Product Lifecycle
Current production status
Availability of replacements or upgrades may vary, check with manufacturer
Key Reasons to Choose
Excellent power efficiency and performance
Robust design for harsh environments
Proven reliability in automotive and industrial applications
Compact and thermally efficient package