Manufacturer Part Number
ZXMN6A11ZTA
Manufacturer
Diodes Incorporated
Introduction
This product is a single N-channel MOSFET transistor with a drain-to-source voltage of 60V and a continuous drain current of 2.7A.
Product Features and Performance
N-channel MOSFET transistor
60V drain-to-source voltage
7A continuous drain current
Low on-resistance of 120mΩ
Input capacitance of 330pF
Power dissipation of 1.5W
Wide operating temperature range of -55°C to 150°C
Product Advantages
Compact SOT-89-3 surface mount package
RoHS3 compliant
Low on-resistance for efficient power handling
Wide operating temperature range
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 60V
Gate-to-Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 120mΩ @ 2.5A, 10V
Drain Current (Id): 2.7A
Input Capacitance (Ciss): 330pF @ 40V
Power Dissipation (Pd): 1.5W
Quality and Safety Features
RoHS3 compliant
Suitable for harsh environments with wide temperature range
Compatibility
This MOSFET is compatible with a variety of electronic circuits and systems that require a high-performance, low on-resistance switching device.
Application Areas
Power supplies
Motor drives
Switching circuits
Amplifiers
General-purpose switching applications
Product Lifecycle
This product is an active and widely used MOSFET transistor. Diodes Incorporated continues to manufacture and support this part, and there are readily available replacement options if needed.
Key Reasons to Choose This Product
Excellent performance characteristics: low on-resistance, high current handling, and wide operating temperature range.
Compact and space-saving SOT-89-3 surface mount package.
RoHS3 compliance for use in various applications.
Proven reliability and suitability for harsh environments.
Availability of replacement options and continued manufacturer support.
