ZXMN6A25DN8TA - Diodes Incorporated

Manufacturer Part Number

ZXMN6A25DN8TA

Manufacturer

Diodes Incorporated

Introduction

Dual N-Channel MOSFET

Product Features and Performance

Low on-resistance of 50 mΩ at 3.6 A, 10 V

Logic-level gate drive

High current capability up to 3.8 A

Low input capacitance of 1063 pF at 30 V

Low gate charge of 20.4 nC at 10 V

Wide operating temperature range of -55°C to 150°C

Product Advantages

Excellent performance for power management applications

Efficient power delivery

Reliable operation in harsh environments

Key Technical Parameters

Drain to Source Voltage (Vdss): 60 V

Continuous Drain Current (ID): 3.8 A

On-Resistance (RDS(on)): 50 mΩ

Input Capacitance (Ciss): 1063 pF

Gate Charge (Qg): 20.4 nC

Quality and Safety Features

RoHS3 compliant

Suitable for high-reliability applications

Compatibility

Surface mount package (8-SOIC)

Compatible with standard MOSFET drivers and control circuits

Application Areas

Power management

Battery charging and discharging

Motor control

Home appliances

Industrial automation

Product Lifecycle

Currently available product

No known discontinuation plans

Replacements or upgrades may be available in the future

Key Reasons to Choose This Product

High current capability and efficiency

Reliable performance in wide temperature range

Compact surface mount package

Compliance with industry standards for quality and safety