Manufacturer Part Number
ZXMN6A25DN8TA
Manufacturer
Diodes Incorporated
Introduction
Dual N-Channel MOSFET
Product Features and Performance
Low on-resistance of 50 mΩ at 3.6 A, 10 V
Logic-level gate drive
High current capability up to 3.8 A
Low input capacitance of 1063 pF at 30 V
Low gate charge of 20.4 nC at 10 V
Wide operating temperature range of -55°C to 150°C
Product Advantages
Excellent performance for power management applications
Efficient power delivery
Reliable operation in harsh environments
Key Technical Parameters
Drain to Source Voltage (Vdss): 60 V
Continuous Drain Current (ID): 3.8 A
On-Resistance (RDS(on)): 50 mΩ
Input Capacitance (Ciss): 1063 pF
Gate Charge (Qg): 20.4 nC
Quality and Safety Features
RoHS3 compliant
Suitable for high-reliability applications
Compatibility
Surface mount package (8-SOIC)
Compatible with standard MOSFET drivers and control circuits
Application Areas
Power management
Battery charging and discharging
Motor control
Home appliances
Industrial automation
Product Lifecycle
Currently available product
No known discontinuation plans
Replacements or upgrades may be available in the future
Key Reasons to Choose This Product
High current capability and efficiency
Reliable performance in wide temperature range
Compact surface mount package
Compliance with industry standards for quality and safety
ZXMN6A25KDiodes IncorporatedMOSFET N-CH 60V 7A TO252-3