Manufacturer Part Number
SSM3K324R,LF
Manufacturer
Toshiba Electronic Devices and Storage Corporation
Introduction
N-Channel MOSFET Transistor
Product Features and Performance
30V Drain to Source Voltage
4A Continuous Drain Current
55mΩ On-Resistance
190pF Input Capacitance
1W Power Dissipation
Operating Temperature up to 150°C
Product Advantages
High Efficiency
Low On-Resistance
Compact SOT-23 Package
Suitable for Switch Mode Power Supplies
Key Technical Parameters
Vdss: 30V
Vgs(max): ±12V
Rds(on) @ 4A, 4.5V: 55mΩ
Ciss @ 30V: 190pF
Id @ 25°C: 4A
Power Dissipation @ 25°C: 1W
Quality and Safety Features
RoHS3 Compliant
Tape and Reel Packaging
Compatibility
U-MOSVII-H Series
Surface Mount Technology
Application Areas
Switching Regulators
Motor Drives
Power Amplifiers
DC-DC Converters
Product Lifecycle
Current product offering
Replacement parts available
Key Reasons to Choose This Product
High efficiency and low on-resistance for improved energy savings
Compact SOT-23 package for space-constrained designs
Suitable for a wide range of power conversion applications
Reliable performance with RoHS3 compliance and high temperature operation
