NTNS3193NZT5G - onsemi

Manufacturer Part Number

NTNS3193NZT5G

Manufacturer

onsemi

Introduction

High-performance N-channel MOSFET for general-purpose applications

Product Features and Performance

20V drain-to-source voltage

4 ohm maximum on-resistance at 100mA, 4.5V

224mA continuous drain current at 25°C

8pF maximum input capacitance at 15V

120mW maximum power dissipation at 25°C

-55°C to 150°C operating temperature range

Metal-oxide semiconductor field-effect transistor (MOSFET) technology

Product Advantages

Compact 3-XLLGA (0.62x0.62) surface-mount package

RoHS-compliant design

Key Technical Parameters

Drain-to-source voltage (Vdss): 20V

Gate-to-source voltage (Vgs): ±8V

On-resistance (Rds(on)): 1.4 ohm @ 100mA, 4.5V

Drain current (Id): 224mA (continuous @ 25°C)

Input capacitance (Ciss): 15.8pF @ 15V

Power dissipation (Pd): 120mW (@ 25°C)

Threshold voltage (Vgs(th)): 1V @ 250uA

Drive voltage range: 1.5V (max Rds(on)), 4.5V (min Rds(on))

Gate charge (Qg): 0.7nC @ 4.5V

Quality and Safety Features

RoHS3 compliant

Tape and reel packaging for surface-mount assembly

Compatibility

Suitable for general-purpose applications in electronic circuits and systems

Application Areas

Power management circuits

Switching circuits

Driver circuits

Control circuits

Product Lifecycle

The NTNS3193NZT5G is an active product, with no indication of discontinuation. Replacements or upgrades may be available, but details would need to be confirmed with the manufacturer.

Key Reasons to Choose This Product

High performance with low on-resistance and high current capability

Compact surface-mount package for space-constrained designs

Wide operating temperature range for rugged applications

RoHS compliance for environmentally-friendly design

Tape and reel packaging for automated assembly