Manufacturer Part Number
NP50P06KDG-E1-AY
Manufacturer
Renesas Electronics Corporation
Introduction
High-performance P-channel power MOSFET with low on-resistance and high current handling capability
Product Features and Performance
Low on-resistance of 17mΩ @ 25A, 10V
High continuous drain current of 50A at 25°C
Input capacitance of 5000pF @ 10V
Power dissipation of 1.8W at Ta and 90W at Tc
Gate-source voltage up to ±20V
Operating temperature up to 175°C
Product Advantages
Excellent power handling capability
Efficient power conversion
Robust design for harsh environments
Key Technical Parameters
Drain to Source Voltage (Vdss): 60V
Gate-Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 17mΩ @ 25A, 10V
Continuous Drain Current (Id): 50A @ 25°C
Input Capacitance (Ciss): 5000pF @ 10V
Power Dissipation: 1.8W (Ta), 90W (Tc)
Quality and Safety Features
RoHS3 compliant
Qualified for industrial and automotive applications
Compatibility
Surface mount TO-263 package
Suitable for high-power, high-current switching applications
Application Areas
Power supplies
Motor drives
Industrial automation
Automotive electronics
Product Lifecycle
Current product offering
No plans for discontinuation
Replacement or upgrade options available upon request
Key Reasons to Choose This Product
Exceptional power handling capability
Industry-leading low on-resistance
Efficient power conversion for improved system performance
Robust design for reliable operation in harsh environments
Compatibility with a wide range of industrial and automotive applications
NP50P04SDGNEC