Manufacturer Part Number
NP50N04YUK-E1-AY
Manufacturer
Renesas Electronics Corporation
Introduction
Discrete Semiconductor Product
Single Transistor FET, MOSFET
Product Features and Performance
40V Drain-to-Source Voltage (Vdss)
±20V Gate-to-Source Voltage (Vgs)
8mOhm Maximum On-Resistance (Rds(on)) @ 25A, 10V
50A Continuous Drain Current (Id) @ 25°C
3200pF Maximum Input Capacitance (Ciss) @ 25V
1W Maximum Power Dissipation (Ta), 97W (Tc)
N-Channel MOSFET
4V Maximum Gate Threshold Voltage (Vgs(th)) @ 250A
57nC Maximum Gate Charge (Qg) @ 10V
Product Advantages
Automotive-grade (AEC-Q101 qualified)
High current handling capability
Low on-resistance for improved efficiency
Optimized for automotive and industrial applications
Key Technical Parameters
Voltage: 40V Drain-to-Source (Vdss), ±20V Gate-to-Source (Vgs)
Current: 50A Continuous Drain (Id) @ 25°C
Resistance: 4.8mOhm Maximum On-Resistance (Rds(on))
Capacitance: 3200pF Maximum Input Capacitance (Ciss) @ 25V
Power: 1W Maximum Power Dissipation (Ta), 97W (Tc)
Temperature: 175°C Maximum Operating Temperature
Quality and Safety Features
ROHS3 Compliant
Automotive-grade (AEC-Q101 qualified)
Compatibility
Surface Mount (SMT) assembly
8-PowerLDFN package
Application Areas
Automotive electronics
Industrial power applications
Motor control
DC-DC converters
Lighting control
Product Lifecycle
Currently available
No immediate plans for discontinuation
Replacements and upgrades may be available in the future
Key Reasons to Choose This Product
Automotive-grade reliability and quality
High current handling capability for efficient power management
Low on-resistance for improved energy efficiency
Optimized for demanding automotive and industrial applications
Wide operating temperature range up to 175°C
Compact and space-saving package
