Manufacturer Part Number
NP50P04SDG-E1-AY
Manufacturer
Renesas Electronics Corporation
Introduction
High-performance P-channel power MOSFET with low on-resistance and fast switching speed for power supply and motor drive applications.
Product Features and Performance
Low on-resistance down to 9.6 mΩ
High drain current rating up to 50 A
Fast switching speed with low gate charge
Wide operating temperature range up to 175°C
Product Advantages
Efficient power conversion with low conduction losses
Compact design with high power density
Reliable operation in harsh environments
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 40 V
Gate-to-Source Voltage (Vgs): ±20 V
On-Resistance (Rds(on)): 9.6 mΩ
Drain Current (Id): 50 A
Input Capacitance (Ciss): 5000 pF
Power Dissipation (Ptot): 1.2 W (Ta), 84 W (Tc)
Quality and Safety Features
RoHS3 compliant
Robust TO-252 (DPAK) package
Compatibility
Suitable for power supply, motor drive, and other power electronics applications
Application Areas
Power supplies
Motor drives
Industrial electronics
Automotive electronics
Product Lifecycle
Current product offering, no indication of discontinuation
Replacement or upgrade options available from Renesas
Several Key Reasons to Choose This Product
Excellent efficiency and power density
Reliable performance in high-temperature environments
Easy integration into power electronics designs
Broad application versatility
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