Manufacturer Part Number
FQB34N20LTM
Manufacturer
Fairchild (onsemi)
Introduction
High-performance N-Channel power MOSFET with low on-resistance and high current capability.
Product Features and Performance
Very low on-resistance for high efficiency
High current capability up to 31A
Wide operating temperature range of -55°C to 150°C
Low input capacitance for fast switching
High gate-source voltage rating of ±20V
Product Advantages
Excellent thermal performance and power dissipation
Efficient power conversion and low power loss
Reliable and robust design for demanding applications
Suitable for a wide range of power switching and control circuits
Key Technical Parameters
Drain-Source Voltage (Vdss): 200V
On-Resistance (Rds(on)): 75mΩ @ 15.5A, 10V
Continuous Drain Current (Id): 31A @ 25°C
Input Capacitance (Ciss): 3900pF @ 25V
Power Dissipation (Pd): 3.13W (Ta), 180W (Tc)
Quality and Safety Features
Rugged and reliable MOSFET technology
Compliance with relevant safety and quality standards
Manufactured in an ISO-certified facility for consistency
Compatibility
Suitable for a wide range of power switching and control applications
Interchangeable with other similar N-Channel power MOSFET devices
Application Areas
Switching power supplies
Motor drives
Inverters
Electric vehicle systems
Industrial and consumer electronics
Product Lifecycle
The FQB34N20LTM is an actively supported product
Replacements and upgrades are available from the manufacturer
Key Reasons to Choose This Product
Excellent efficiency and power handling capability
Reliable and robust design for demanding applications
Wide operating temperature range for versatile use
Fast switching performance for high-frequency circuits
Availability of drop-in replacements and upgrades from the manufacturer
