Manufacturer Part Number
FQB33N10LTM
Manufacturer
onsemi
Introduction
A high-performance, N-channel, enhancement-mode power MOSFET in a DPAK (TO-263) package.
Product Features and Performance
Optimized for high-efficiency, high-frequency switching applications
Low on-resistance and fast switching speeds
Wide operating temperature range of -55°C to 175°C (TJ)
High drain-to-source voltage rating of 100V
Low gate charge and input capacitance for efficient switching
Maximum continuous drain current of 33A at 25°C (Tc)
Maximum power dissipation of 3.75W at 25°C (Ta) and 127W at 25°C (Tc)
Product Advantages
Excellent thermal performance and package design for efficient heat dissipation
Highly reliable and robust construction for long-term use
Optimized for high-frequency, high-efficiency power conversion applications
Wide operating temperature range for use in diverse environments
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 100V
Gate-to-Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 52mΩ @ 16.5A, 10V
Input Capacitance (Ciss): 1630pF @ 25V
Gate Charge (Qg): 40nC @ 5V
FET Type: N-Channel Enhancement-Mode MOSFET
Quality and Safety Features
RoHS3 compliant
Adherence to high manufacturing and quality standards
Compatibility
Compatible with a wide range of power electronics and power supply applications
Application Areas
Switching power supplies
Power factor correction circuits
Motor drives
Battery chargers
DC-DC converters
Inverters
Product Lifecycle
This product is an actively supported and available part from onsemi.
Replacement or upgrade options may be available, depending on application needs.
Several Key Reasons to Choose This Product
Excellent thermal performance and power handling capabilities
Fast switching speeds and high efficiency for high-frequency applications
Wide operating temperature range for use in diverse environments
Robust and reliable construction for long-term use
Optimized for a variety of power electronics and power conversion applications