Manufacturer Part Number
FQB33N10TM
Manufacturer
Fairchild (onsemi)
Introduction
High-performance N-channel power MOSFET
Product Features and Performance
Extremely low on-resistance
High switching speed
Robust and reliable design
Suitable for high-frequency switching applications
Product Advantages
Excellent thermal performance
Optimized for high-efficiency power conversion
Reduced power losses
Compact and space-saving package
Key Technical Parameters
Drain to Source Voltage (Vdss): 100 V
Maximum Gate-Source Voltage (Vgs): ±25 V
On-Resistance (Rds(on)): 52 mΩ @ 16.5 A, 10 V
Continuous Drain Current (Id): 33 A @ 25°C
Input Capacitance (Ciss): 1500 pF @ 25 V
Power Dissipation: 3.75 W (Ta), 127 W (Tc)
Quality and Safety Features
Stringent quality control
Robust construction for reliable operation
Compliance with relevant safety standards
Compatibility
Suitable for a wide range of power conversion applications
Application Areas
Switching power supplies
Motor drives
Inverters
DC/DC converters
Industrial and consumer electronics
Product Lifecycle
The FQB33N10TM is an active product, and no discontinuation is planned.
Upgrades and replacements may be available in the future.
Key Reasons to Choose This Product
Exceptional power efficiency due to low on-resistance
High reliability and robustness for demanding applications
Compact and space-saving package for design flexibility
Suitable for high-frequency and high-power switching applications
Excellent thermal management and power dissipation capabilities