Manufacturer Part Number
FQB34N20LTM
Manufacturer
onsemi
Introduction
The FQB34N20LTM is a high-performance N-channel MOSFET transistor from onsemi, suitable for a wide range of power switching applications.
Product Features and Performance
200V drain-to-source voltage rating
75mΩ maximum on-resistance at 15.5A, 10V
31A continuous drain current at 25°C case temperature
3900pF maximum input capacitance at 25V
13W maximum power dissipation at 25°C ambient temperature, 180W at 25°C case temperature
Product Advantages
Robust design for high reliability
Optimized for efficient power conversion
Suitable for high-frequency switching applications
Compact DPAK (TO-263) package for space-saving PCB layouts
Key Technical Parameters
Voltage rating: 200V drain-to-source
On-resistance: 75mΩ max. at 15.5A, 10V
Drain current: 31A continuous at 25°C
Input capacitance: 3900pF max. at 25V
Power dissipation: 3.13W max. at 25°C ambient, 180W max. at 25°C case
Quality and Safety Features
RoHS3 compliant
Designed and manufactured to high quality standards
Compatibility
Compatible with standard MOSFET gate driver circuits
Suitable for a wide range of power conversion and control applications
Application Areas
Switch-mode power supplies
Motor drives
Industrial control systems
Automotive electronics
Product Lifecycle
This product is currently in active production and not nearing discontinuation.
Replacements or upgrades may be available in the future as technology evolves.
Key Reasons to Choose This Product
Excellent performance-to-size ratio with the compact DPAK package
Robust design for high reliability in demanding applications
Optimized for efficient power conversion and high-frequency switching
Wide operating temperature range of -55°C to 150°C
FQB33N10 MOSAMI Semiconductor/onsemi