Manufacturer Part Number
NTMFS5C404NT1G
Manufacturer
onsemi
Introduction
High-performance N-channel enhancement-mode power MOSFET suitable for use in high-frequency switching applications.
Product Features and Performance
Optimized for high-frequency, high-efficiency switching applications
Low on-resistance and fast switching speed
High power density and high efficiency
Excellent thermal and electrical characteristics
Robust design for reliable operation
Product Advantages
Extremely low on-resistance for low conduction losses
Fast switching for high-frequency operation
High power handling capability
Excellent thermal management for high power dissipation
Reliable performance and long lifetime
Key Technical Parameters
Drain to Source Voltage (Vdss): 40V
Gate-Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 0.7mΩ @ 50A, 10V
Continuous Drain Current (Id): 53A (Ta), 378A (Tc)
Input Capacitance (Ciss): 8400pF @ 25V
Power Dissipation: 3.9W (Ta), 200W (Tc)
Quality and Safety Features
RoHS3 compliant
AEC-Q101 qualified for automotive applications
Designed for high reliability and long-term performance
Compatibility
Suitable for a wide range of high-frequency, high-power switching applications
Application Areas
Switching power supplies
Motor drives
Industrial and automotive power electronics
Telecommunications equipment
Alternative energy systems
Product Lifecycle
This product is an active and widely available device
No discontinuation or end-of-life announced
Key Reasons to Choose This Product
Extremely low on-resistance for high efficiency and low power losses
Fast switching speed for high-frequency operation
High power handling capability and thermal management
Reliable and robust design for long-term performance
Automotive and industrial-grade quality and safety features
NTMFS5C404NLT1GFairchild SemiconductorPOWER FIELD-EFFECT TRANSISTOR, N