Manufacturer Part Number
NTMFS5830NLT1G
Manufacturer
onsemi
Introduction
High-performance N-channel power MOSFET suitable for high-efficiency, high-power switching applications.
Product Features and Performance
40V drain-to-source voltage rating
3mΩ maximum on-resistance
28A continuous drain current at 25°C
172A continuous drain current at case temperature
5,880pF maximum input capacitance
2W maximum power dissipation at 25°C ambient
-55°C to 150°C operating temperature range
Product Advantages
Excellent thermal characteristics for high power applications
Low on-resistance for high efficiency
High avalanche energy capability
Key Technical Parameters
Drain-to-source voltage (Vdss): 40V
Gate-to-source voltage (Vgs): ±20V
On-resistance (Rds(on)): 2.3mΩ
Continuous drain current (Id): 28A at 25°C ambient, 172A at case temperature
Quality and Safety Features
Robust design for high reliability
ESD protection for safe handling
RoHS compliant
Compatibility
Can be used as a replacement or upgrade for similar power MOSFET products.
Application Areas
Switching power supplies
Motor drives
Industrial automation
Electric vehicles
Renewable energy systems
Product Lifecycle
The NTMFS5830NLT1G is an actively supported product from onsemi. Replacement or upgrade options are available if needed.
Key Reasons to Choose This Product
High current and power handling capabilities
Excellent thermal performance for efficient operation
Low on-resistance for high efficiency
Wide operating temperature range
Robust design for high reliability
Compatibility with a variety of applications