Manufacturer Part Number
NTMFS4H01NT1G
Manufacturer
onsemi
Introduction
High-performance N-Channel MOSFET device
Product Features and Performance
Low on-resistance for high efficiency
High current capability up to 54A (Ta) and 334A (Tc)
Low gate charge for fast switching
High power dissipation up to 3.2W (Ta) and 125W (Tc)
Wide operating temperature range up to 150°C
Product Advantages
Excellent thermal management
High power density
Efficient power conversion
Fast and reliable switching
Key Technical Parameters
Drain to Source Voltage (Vdss): 25V
Gate-Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 0.7mΩ @ 30A, 10V
Input Capacitance (Ciss): 5693pF @ 12V
Quality and Safety Features
RoHS3 compliant
Reliable and durable construction
Compatibility
Surface mount package (5-DFN, 8-PowerTDFN)
Suitable for a wide range of power electronics applications
Application Areas
Power supplies
Motor drives
Inverters
Power conversion systems
Product Lifecycle
Current production model
Availability of replacements and upgrades
Key Reasons to Choose This Product
Excellent power efficiency and thermal performance
High current handling capability
Fast and reliable switching characteristics
Compact and versatile package options
Compliance with industry standards for quality and safety
