Manufacturer Part Number
NTMFS5832NLT1G
Manufacturer
onsemi
Introduction
The NTMFS5832NLT1G is a N-Channel power MOSFET transistor from onsemi, designed for power management and switching applications.
Product Features and Performance
40V Drain-to-Source Voltage (Vdss)
2mΩ Maximum On-Resistance (Rds(on)) at 20A, 10V
20A Continuous Drain Current (Id) at 25°C
111A Continuous Drain Current (Id) at 100°C
2700pF Maximum Input Capacitance (Ciss) at 25V
51nC Maximum Gate Charge (Qg) at 10V
Wide operating temperature range of -55°C to 150°C
Product Advantages
Low on-resistance for high efficiency
High current handling capability
Fast switching speed
Compact 5-DFN (5x6) (8-SOFL) package
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 40V
Gate-to-Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 4.2mΩ @ 20A, 10V
Continuous Drain Current (Id): 20A (Ta), 111A (Tc)
Input Capacitance (Ciss): 2700pF @ 25V
Gate Charge (Qg): 51nC @ 10V
Quality and Safety Features
RoHS3 compliant
Suitable for high-reliability applications
Compatibility
Compatible with a wide range of power management and switching applications
Application Areas
Power supplies
Motor drives
Inverters
Switching regulators
Power amplifiers
Product Lifecycle
Currently in production
No planned obsolescence or discontinuation
Replacement or upgraded models may become available in the future
Key Reasons to Choose
Excellent performance in terms of low on-resistance and high current capability
Compact and efficient package design
Wide operating temperature range
Reliable and RoHS-compliant construction
Suitable for a variety of power management and switching applications