Manufacturer Part Number
NTMFS5C410NT1G
Manufacturer
onsemi
Introduction
High-performance N-Channel MOSFET with low RDS(on) for power management and motor control applications.
Product Features and Performance
Ultra-low on-resistance (RDS(on)) down to 0.92 mΩ @ 50A, 10V
High drain current capability up to 46A (Ta) and 300A (Tc)
Low gate charge (Qg) of 86 nC @ 10V for efficient switching
Wide operating temperature range of -55°C to 175°C
Robust design with high avalanche energy capability
Product Advantages
Excellent power efficiency and thermal performance
Reduced power losses for improved system efficiency
Compact and space-saving design
Reliable operation in demanding applications
Key Technical Parameters
Drain-Source Voltage (VDS): 40V
Gate-Source Voltage (VGS): ±20V
On-Resistance (RDS(on)): 0.92 mΩ @ 50A, 10V
Drain Current (ID): 46A (Ta), 300A (Tc)
Input Capacitance (Ciss): 6100 pF @ 25V
Power Dissipation (PD): 3.9W (Ta), 166W (Tc)
Quality and Safety Features
RoHS3 compliant
Suitable for high-reliability applications
Compatibility
Compatible with a wide range of power management and motor control systems
Application Areas
Power supplies
Motor drives
Industrial automation
Automotive electronics
Telecommunications equipment
Product Lifecycle
Currently in production
No known discontinuation plans
Replacements or upgrades may be available in the future
Key Reasons to Choose This Product
Exceptional power efficiency and thermal performance
Industry-leading low on-resistance for reduced power losses
Compact and space-saving design for easy integration
Reliable and robust operation in demanding applications
Suitable for a wide range of power management and motor control systems