Manufacturer Part Number
NGTB60N65FL2WG
Manufacturer
onsemi
Introduction
High-performance, high-power insulated-gate bipolar transistor (IGBT) device designed for use in a wide range of industrial and consumer power conversion applications.
Product Features and Performance
Field-stop IGBT technology for improved performance and efficiency
High power density and high blocking voltage capability
Low on-state voltage and fast switching
Wide operating temperature range of -55°C to 175°C
Product Advantages
Efficient power conversion and control
Robust and reliable performance
Suitable for high-power, high-voltage applications
Key Technical Parameters
Collector-Emitter Breakdown Voltage (VCES): 650V
Collector Current (IC): 100A
On-state Voltage (VCE(on)): 2V @ 15V, 60A
Reverse Recovery Time (trr): 96ns
Gate Charge (Qg): 318nC
Quality and Safety Features
ROHS3 compliant
TO-247-3 package for reliable thermal performance
Compatibility
Suitable for various industrial and consumer power conversion applications
Application Areas
Motor drives
Power inverters
UPS systems
Welding equipment
Induction heating
Servo drives
Product Lifecycle
Currently in production
Replacement or upgrade options available
Key Reasons to Choose This Product
High-performance and efficient power conversion
Robust and reliable operation across wide temperature range
Suitable for high-power, high-voltage applications
Proven field-stop IGBT technology for improved performance
Compact and reliable TO-247-3 package