Manufacturer Part Number
NGTB50N65FL2WG
Manufacturer
onsemi
Introduction
High-performance trench field stop IGBT designed for industrial applications.
Product Features and Performance
Trench field stop IGBT technology
650V collector-emitter breakdown voltage
100A collector current rating
Low Vce(on) of 2V @ 15V, 50A
Fast reverse recovery time of 94ns
High power density with 417W max power
Compact TO-247-3 package
Product Advantages
High efficiency and reliability
Low conduction and switching losses
Compact design for space-constrained applications
Key Technical Parameters
Voltage Collector Emitter Breakdown (Max): 650V
Current Collector (Ic) (Max): 100A
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 50A
Reverse Recovery Time (trr): 94ns
Gate Charge: 220nC
Current Collector Pulsed (Icm): 200A
Switching Energy: 1.5mJ (on), 460J (off)
Td (on/off) @ 25°C: 100ns/237ns
Quality and Safety Features
RoHS3 compliant
Operating temperature range: -55°C to 175°C
Compatibility
Through-hole mounting in TO-247-3 package
Application Areas
Industrial motor drives
Power supplies
Welding equipment
Uninterruptible power supplies (UPS)
Induction heating
General industrial power conversion
Product Lifecycle
This product is an active and available component.
Replacements and upgrades may be available from onsemi.
Key Reasons to Choose This Product
High efficiency and reliability with trench field stop IGBT technology
Low conduction and switching losses for improved system performance
Compact TO-247-3 package for space-constrained designs
Wide operating temperature range for industrial applications
RoHS3 compliance for environmental responsibility