Manufacturer Part Number
NGTB75N60FL2WG
Manufacturer
onsemi
Introduction
High-performance insulated gate bipolar transistor (IGBT) for industrial and power electronics applications.
Product Features and Performance
Trench field stop IGBT technology
600V collector-emitter breakdown voltage
100A collector current rating
Low Vce(on) of 2V at 15V gate, 75A collector current
Fast reverse recovery time of 80ns
High power density and efficiency
Low switching losses
Product Advantages
Optimized for high-frequency, high-power switching applications
Excellent thermal and electrical characteristics
Robust and reliable performance
Key Technical Parameters
Collector-Emitter Breakdown Voltage (Vceo): 600V
Collector Current (Ic): 100A
Collector-Emitter Saturation Voltage (Vce(on)): 2V @ 15V, 75A
Reverse Recovery Time (trr): 80ns
Gate Charge (Qg): 310nC
Pulse Collector Current (Icm): 200A
Turn-on Delay Time (td(on))/Turn-off Delay Time (td(off)): 110ns/270ns
Quality and Safety Features
Meets industrial quality and reliability standards
Robust design for high-stress applications
Equipped with overcurrent and over-temperature protection
Compatibility
Standard IGBT footprint (TO-247-3 package)
Suitable for a wide range of industrial and power electronics applications
Application Areas
Industrial motor drives
Power supplies
Uninterruptible power supplies (UPS)
Welding equipment
Induction heating
Traction control
Product Lifecycle
Currently in active production
No plans for discontinuation
Replacement and upgrade options available
Key Reasons to Choose This Product
High power density and efficiency for improved system performance
Excellent thermal and electrical characteristics for reliable operation
Fast switching speed and low losses for high-frequency applications
Robust design and protection features for industrial-grade reliability
Compatibility with standard IGBT footprint for easy integration
