Manufacturer Part Number
NGTB50N120FL2WG
Manufacturer
onsemi
Introduction
High-performance 1200V IGBT with Trench Field Stop technology
Product Features and Performance
1200V Collector-Emitter Breakdown Voltage
100A Collector Current
2V Collector-Emitter Saturation Voltage
256ns Reverse Recovery Time
311nC Gate Charge
200A Pulsed Collector Current
4mJ Turn-On Switching Energy, 1.4mJ Turn-Off Switching Energy
118ns Turn-On Delay Time, 282ns Turn-Off Delay Time
Product Advantages
Trench Field Stop technology for high efficiency and low conduction losses
High current and voltage capabilities
Fast switching for high-frequency applications
Robust and reliable design
Key Technical Parameters
Voltage Collector Emitter Breakdown (Max): 1200V
Current Collector (Ic) (Max): 100A
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 50A
Reverse Recovery Time (trr): 256ns
Gate Charge: 311nC
Current Collector Pulsed (Icm): 200A
Switching Energy: 4.4mJ (on), 1.4mJ (off)
Td (on/off) @ 25°C: 118ns/282ns
Quality and Safety Features
RoHS3 Compliant
Rated for -55°C to 175°C junction temperature
Compatibility
Through-hole mounting in TO-247 package
Application Areas
High-power motor drives
Servo amplifiers
Uninterruptible power supplies (UPS)
Welding equipment
Induction heating
Solar inverters
Product Lifecycle
Current product offering, no indication of discontinuation
Replacements or upgrades may be available from onsemi
Several Key Reasons to Choose This Product
Excellent performance with Trench Field Stop technology
High voltage and current capabilities
Fast switching for high-frequency applications
Robust and reliable design for demanding applications
RoHS3 compliant for environmental compliance
Wide operating temperature range