Manufacturer Part Number
NGTB45N60S1WG
Manufacturer
onsemi
Introduction
High voltage, high current IGBT transistor
Product Features and Performance
Trench IGBT design
600V collector-emitter breakdown voltage
90A maximum collector current
4V maximum collector-emitter saturation voltage at 15V gate-emitter voltage and 45A collector current
70ns reverse recovery time
125nC gate charge
Product Advantages
High power and efficiency
Fast switching
Reliable and robust design
Key Technical Parameters
Voltage Collector Emitter Breakdown (Max): 600V
Current Collector (Ic) (Max): 90A
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 45A
Reverse Recovery Time (trr): 70ns
Gate Charge: 125nC
Current Collector Pulsed (Icm): 180A
Switching Energy: 1.25mJ (on), 530μJ (off)
Td (on/off) @ 25°C: 72ns/132ns
Quality and Safety Features
Designed for high reliability and safety
Suitable for harsh environments with -55°C to 175°C operating temperature range
Compatibility
Through-hole mounting in TO-247-3 package
Application Areas
Power electronics
Motor drives
Inverters
Welding equipment
Uninterruptible power supplies (UPS)
Product Lifecycle
This product is currently in active production and widely available
No plans for discontinuation, with continued support and availability of replacements
Several Key Reasons to Choose This Product
High power handling capability up to 300W
Fast switching performance for efficient power conversion
Robust and reliable design for demanding applications
Compatibility with common through-hole mounting
Readily available and supported by the manufacturer
